(liiii ^etnl-condikitoi t-pioaucti, una. c/ ls 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 complementary silicon power darlington transistors ..designed for use as output devices in complementary general purpose amplifier applications. features: * high gain darlington performance * high dc current gain hfe = 1000(min) @ lc = 20 a * monolithic construction with built-in base-emitter shunt resistor maximum ratings characteristic collector-emitter voltage coiiector-base voltage emitter-base voltage collector current-continuous -peak base current total power dissipation ?tc= 25c derate above 25c operating and storage junction temperature range symbol vceo vcbo vebo 'c 'cm ib pd tj i^sto mj11011 mj11012 60 60 mj11013 mj11014 90 90 mj1101s MJ11016 120 120 5.0 30 50 1.0 200 1.15 - 65 to +200 unit v v v a a w w/c c thermal characteristics characteristic thermal resistance junction to case symbol rejc max 0.87 unit c/w 200 t 175 |l50 125 i 1 5 75 i ^ ' 25 figure -1 power derating xn n ^\ 'x v n. \ 25 50 75 100 125 150 175 200 tc,temperature('c) pnp npn mj11011 mj11012 mj11013 mj11014 mj11015 MJ11016 30 ampere complementary silicon power darlington transistor 60-120 volts 200 watts to-3 ^ .-h? 1 .. ~\ x hi f j ,?ij /tti~]e i ii ? ^ ***. .,/ a .. ...i pin 1 base ni u z.emftter collector(case) lsi vi a b c d e f g h i j k millimeters min 38.75 19.28 796 11.18 25.20 0.92 1.38 29.90 16.64 3.88 10.67 max 39.96 22.23 9.23 12.19 26.67 1.09 1.62 30.40 17.30 4.36 11.18 nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use nj semi-conductors entourages customers to verify that datasheets are current before placing orders. qualify semi-conductors
mj11011, mj11013, mj11015 pnp / mj11012, mj11014, MJ11016 npn electrical characteristics ( tc = 25 c unless othenmse noted ) characteristic symbol min max unit off characteristics collector - emitter sustaining voltage (1) (lc=100ma.ib = 0) mj1 101 1,mj1 1012 mj1 101 3.mj1 1014 mj11015.MJ11016 collector cutoff current (vcb = 50v, l. = 0.0) collector-emitter leakage current (vel = 60v,rm=1.0k ohm ) mj1 101 1.mj1 1012 (vei = 90v,rm=1.0k ohm ) mj11013.mj11014 (v=120v,rib= 1.0k ohm ) mj11015.MJ11016 ( v = 60 v,r = 1.0k ohm ,te = 125c ) mj1 101 1.mj1 1012 (ves = 90v,rii=1.0kohm,te=125c) mj11013.mj11014 (veb = 120 v,r,b = 1.0k ohm,te =125c ) mj11015,MJ11016 emitter cutoff current (veb = 5.0v,ic=0 ) vceMJ11016
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